3674/JN - Atomic Layer Deposition (ALD) System

The Department of Physics and Astronomy at The University of Sheffield, requires an atomic layer deposition (ALD) system for the growth of ultra-thin layers of metal oxides on substrates for use in a range of optoelectronic devices. The system needs to be capable of depositing a range of metal oxides (in particular Al2O3, TiO2, SnOx and InOx) onto substrates which are placed on a sample holder with a circular diameter of ~150mm. The predominant use of this system will be to deposit metal oxide layers within metal halide perovskite semiconductor devices. This requires a system which can ensure substrates are held at various temperatures ranging from 50°C to 200°C during deposition. This system shall be used to deposit thin films on substrates of different textures. Therefore, conformality of the resultant films is a key requirement. The instrument needs to be a tabletop instrument and must be cleanroom compatible.

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